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| BCX 17, BCX 18 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BCX 17 45 V 50 V 5V 250 mW 1) 500 mA 1A 200 mA 150/C - 65...+ 150/C BCX 18 25 V 30 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 20 V IE = 0, - VCB = 20 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 5 V - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat - - - ICB0 - ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 100 nA 5 :A 100 nA 620 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 52 01.11.2003 1 General Purpose Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 1 V, - IC = 100 mA - VCE = 1 V, - IC = 300 mA - VCE = 1 V, - IC = 500 mA Base-Emitter voltage - Basis-Emitter-Spannung 1) - VCE = 1 V, - IC = 500 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung BCX 17 = T1 fT CCB0 80 MHz - RthA - VBEon - hFE hFE hFE 100 70 40 BCX 17, BCX 18 Kennwerte (Tj = 25/C) Typ. - - - - - 9 pF Max. 600 - - 1.2 V - - 420 K/W 2) BCX 19, BCX 20 BCX 18 = T2 Collector-Base Capacitance - Kollektor-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 53 |
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